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R1LV0408C-I Series
Wide Temperature Range Version 4M SRAM (512-kword x 8-bit)
REJ03C0098-0200Z Rev. 2.00 May.25.2004
Description
The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword x 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin STSOP.
Features
* Single 3 V supply: 2.7 V to 3.6 V * Access time: 55/70 ns (max) * Power dissipation: Active: 6 mW/MHz (typ) Standby: 1.5 W (typ) * Completely static memory. No clock or timing strobe required * Equal access and cycle times * Common data input and output. Three state output * Directly TTL compatible. All inputs and outputs * Battery backup operation. * Operating temperature: -40 to +85C
Rev.2.00, May.25.2004, page 1 of 12
R1LV0408C-I Series
Ordering Information
Type No. R1LV0408CSP-5SI R1LV0408CSP-7LI R1LV0408CSB-5SI R1LV0408CSB-7LI R1LV0408CSA-5SI R1LV0408CSA-7LI Access time 55 ns 70 ns 55 ns 70 ns 55 ns 70 ns 8mm x 13.4mm STSOP (32P3K-B) 400-mil 32-pin plastic TSOP II (32P3Y-H) Package 525-mil 32-pin plastic SOP (32P2M-A)
Rev.2.00, May.25.2004, page 2 of 12
R1LV0408C-I Series
Pin Arrangement
32-pin SOP 32-pin TSOP
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE# A13 A8 A9 A11 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 A11 A9 A8 A13 WE# A18 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view)
32-pin STSOP
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3
Pin Description
Pin name A0 to A18 I/O0 to I/O7 CS# (CS) OE# (OE) WE# (WE) VCC VSS Function Address input Data input/output Chip select Output enable Write enable Power supply Ground
Rev.2.00, May.25.2004, page 3 of 12
R1LV0408C-I Series
Block Diagram
LSB V CC V SS * * * * *
MSB
A11 A9 A8 A15 A18 A10 A13 A17 A16 A14 A12
Row Decoder
Memory Matrix 2,048 x 2,048
I/O0 Input Data Control I/O7
* *
Column I/O Column Decoder
* *
LSB A3 A2A1A0 A4 A5 A6 A7 MSB * * CS# WE# OE# Timing Pulse Generator Read/Write Control
Rev.2.00, May.25.2004, page 4 of 12
R1LV0408C-I Series
Operation Table
WE# x H H L L CS# H L L L L OE# x H L H L Mode Not selected Output disable Read Write Write VCC current ISB, ISB1 ICC ICC ICC ICC I/O0 to I/O7 High-Z High-Z Dout Din Din Ref. cycle Read cycle Write cycle (1) Write cycle (2)
Note: H: VIH, L: VIL, x: VIH or VIL
Absolute Maximum Ratings
Parameter Power supply voltage relative to VSS Terminal voltage on any pin relative to VSS Power dissipation Operating temperature Storage temperature range Storage temperature range under bias Symbol VCC VT PT Topr Tstg Tbias Value -0.5 to +4.6 -0.5* to VCC + 0.5* 0.7 -40 to +85 -65 to +150 -40 to +85
1 2
Unit V V W C C C
Notes: 1. VT min: -3.0 V for pulse half-width 30 ns. 2. Maximum voltage is +4.6 V.
DC Operating Conditions
(Ta = -40 to +85C)
Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Note: VIH VIL Min 2.7 0 2.2 -0.3*
1
Typ 3.0 0
Max 3.6 0 VCC + 0.3 0.6
Unit V V V V
1. VIL min: -3.0 V for pulse half-width 30 ns.
Rev.2.00, May.25.2004, page 5 of 12
R1LV0408C-I Series
DC Characteristics
Parameter Input leakage current Output leakage current Operating current Average operating current Symbol Min |ILI| |ILO| ICC ICC1 Typ 5*1 8*1 Max Unit Test conditions 1 1 10 25 A A mA mA Vin = VSS to VCC CS# = VIH or OE# = VIH or WE# = VIL or VI/O = VSS to VCC CS# = VIL, Others = VIH/ VIL, II/O = 0 mA Min. cycle, duty = 100%, CS# = VIL, Others = VIH/VIL II/O = 0 mA Cycle time = 1 s, duty = 100%, II/O = 0 mA, CS# 0.2 V, VIH VCC - 0.2 V, VIL 0.2 V CS# = VIH Vin 0 V, CS# VCC - 0.2 V
ICC2
2*1
5
mA
Standby current Standby current -5SI to +85C to +70C to +40C to +25C -7LI to +85C to +70C to +40C to +25C Output low voltage
ISB ISB1 ISB1 ISB1 ISB1 ISB1 ISB1 ISB1 ISB1 VOL VOL2 VOH VOH2
2.4
0.1*1 0.3 0.7* 0.5* 0.7* 0.5*
2 1 2 1
mA A A A A A A A A V V V V
10 8 3 3 20 16 10 10 0.4 0.2
IOL = 2.1 mA IOL = 100 A IOH = -1.0 mA IOH = -0.1 mA
Output high voltage
VCC - 0.2
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25C and specified loading, and not guaranteed. 2. Typical values are at VCC = 3.0 V, Ta = +40C and specified loading, and not guaranteed.
Capacitance
(Ta = +25C, f = 1.0 MHz)
Parameter Input capacitance Input/output capacitance Note: Symbol Cin CI/O Min Typ Max 8 10 Unit pF pF Test conditions Vin = 0 V VI/O = 0 V Note 1 1
1. This parameter is sampled and not 100% tested.
Rev.2.00, May.25.2004, page 6 of 12
R1LV0408C-I Series
AC Characteristics
(Ta = -40 to +85C, VCC = 2.7 V to 3.6 V, unless otherwise noted.) Test Conditions * * * * Input pulse levels: VIL = 0.4 V, VIH = 2.4 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + CL (50 pF) (R1LV0408C-5SI) 1 TTL Gate + CL (100 pF) (R1LV0408C-7LI) (Including scope and jig)
Read Cycle
R1LV0408C-I -5SI Parameter Read cycle time Address access time Chip select access time Output enable to output valid Chip select to output in low-Z Output enable to output in low-Z Chip deselect to output in high-Z Output disable to output in high-Z Output hold from address change Symbol tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH Min 55 10 5 0 0 10 Max 55 55 30 20 20 -7LI Min 70 10 5 0 0 10 Max 70 70 35 25 25 Unit ns ns ns ns ns ns ns ns ns 2 2 1, 2 1, 2 Notes
Rev.2.00, May.25.2004, page 7 of 12
R1LV0408C-I Series Write Cycle
R1LV0408C-I -5SI Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time Write to output in high-Z Data to write time overlap Data hold from write time Output active from end of write Output disable to output in high-Z Symbol tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW tOHZ Min 55 50 0 50 40 0 0 25 0 5 0 Max 20 20 -7LI Min 70 60 0 60 50 0 0 30 0 5 0 Max 25 25 Unit ns ns ns ns ns ns ns ns ns ns ns 2 1, 2, 7 3, 12 6 1, 2, 7 4 5 Notes
Notes: 1. tHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. A write occurs during the overlap (tWP) of a low CS# and a low WE#. A write begins at the later transition of CS# going low or WE# going low. A write ends at the earlier transition of CS# going high or WE# going high. tWP is measured from the beginning of write to the end of write. 4. tCW is measured from CS# going low to the end of write. 5. tAS is measured from the address valid to the beginning of write. 6. tWR is measured from the earlier of WE# or CS# going high to the end of write cycle. 7. During this period, I/O pins are in the output state so that the input signals of the opposite phase to the outputs must not be applied. 8. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE# transition, the output remain in a high impedance state. 9. Dout is the same phase of the write data of this write cycle. 10. Dout is the read data of next address. 11. If CS# is low during this period, I/O pins are in the output state. Therefore, the input signals of the opposite phase to the outputs must not be applied to them. 12. In the write cycle with OE# low fixed, tWP must satisfy the following equation to avoid a problem of data bus contention. tWP tDW min + tWHZ max
Rev.2.00, May.25.2004, page 8 of 12
R1LV0408C-I Series
Timing Waveform
Read Timing Waveform (WE# = VIH)
tRC
Address
Valid address tAA tCO
CS# tLZ tOE tOLZ OE# tOHZ tHZ
Dout
High impedance
Valid data tOH
Rev.2.00, May.25.2004, page 9 of 12
R1LV0408C-I Series Write Timing Waveform (1) (OE# Clock)
tWC Address Valid address tAW OE# tCW CS#
*8
tWR
tAS
tWP
WE# tOHZ Dout High impedance tDW Din Valid data tDH
Rev.2.00, May.25.2004, page 10 of 12
R1LV0408C-I Series Write Timing Waveform (2) (OE# Low Fixed)
tWC Address Valid address tCW tWR
CS#
*8
tAW tWP
WE#
tAS tWHZ tOW
tOH
*9
*10
Dout
High impedance tDW tDH
*11
Din
Valid data
Rev.2.00, May.25.2004, page 11 of 12
R1LV0408C-I Series
Low VCC Data Retention Characteristics
(Ta = -40 to +85C)
Parameter VCC for data retention Data retention current -5SI to +85C to +70C to +40C to +25C -7LI to +85C to +70C to +40C to +25C Chip deselect to data retention time Operation recovery time Symbol Min Typ VDR ICCDR ICCDR ICCDR ICCDR ICCDR ICCDR ICCDR ICCDR tCDR tR 2.0 0
4
Max Unit Test conditions*3 10 8
2 1
0.7* 0.5* 0.5*
1
V A A A A A A A A ns ns
CS# VCC - 0.2 V, Vin 0 V VCC = 3.0 V, Vin 0 V CS# VCC - 0.2 V
3 3 20 16
0.7*2 10 10
See retention waveform
tRC*
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25C and specified loading, and not guaranteed. 2. Typical values are at VCC = 3.0 V, Ta = +40C and specified loading, and not guaranteed. 3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode, Vin levels (address, WE#, OE#, I/O) can be in the high impedance state. 4. tRC = read cycle time.
Low VCC Data Retention Timing Waveform (CS# Controlled)
tCDR VCC 2.7 V Data retention mode tR
2.2 V VDR CS# 0V CS# VCC - 0.2 V
Rev.2.00, May.25.2004, page 12 of 12
Revision History
Rev. Date
R1LV0408C-I Series Data Sheet
Contents of Modification Page Description Initial issue Features Standby: 2.4 W (typ) to 1.5 W (typ) Absolute Maximum Ratings Notes 2 : +7.0 V to +4.6 V DC characteristics -5SI and -7LI items' description are divided. Low VCC Data Retention Characteristics -5SI and -7LI items' description are divided. Low VCC Data Retention Timing Waveform 4.5 V to 2.7 V 2.4 V to 2.2 V 1 5 6 12 12
1.00 2.00
Jul.24.2003 May.25.2004
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